STC8810 transistor equivalent, dual n-channel enhancement mode field effect transistor.
Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD HBM > 2KV.
D1/D2 S1 S1 G1
TS S OP
18 27 36 45
(TOP VIE W)
D1/D2 S2 S2 G2
.
Image gallery
TAGS
Download (Size : 2.00MB)