SP2013 - P-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3.

SamHop

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Datasheet Details

Part number	SP2013
Manufacturer	SamHop
File Size	110.42 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	SP2013 Datasheet
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Green Product SP2013 Ver 1.1 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 20 @ VGS=-4.5V 21 @ VGS=-4.0V -20V -8.5A 22 @ VGS=-3.7V 25 @ VGS=-3.1V 28 @ VGS=-2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a d Limit -20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C -8.5 -6.8 -49 a Units V V A A A W W °C Maximum Power Dissipation 1.67 1.

Published: Oct 17, 2014 |