SMP730 - 400V N-Channel Power MOSFET

Features

6A,400V, RDS(on) =1.0 Ω@VGS=10V.
Low gate charge ( typical 13 nC).
Low Crss ( typical 7pF).
100% avalanche tested.
Fast switching.
Improved dv/dt capability.

SMP730 400v n-channel power mosfet by SY Semiconductors - Datasheet Preview

Datasheet Details

Part number	SMP730
Manufacturer	SY Semiconductors
File Size	364.45 KB
Description	400V N-Channel Power MOSFET
Datasheet	SMP730 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SMP7.0A	Transient Voltage Suppressors	Vishay
SMP7.5A	Transient Voltage Suppressors	Vishay
SMP75-8	TRISIL	STMicroelectronics
SMP-03	10-Terminal Ceramic Surface-Mount Case	RFM
SMP-0SCMC	Trisil for telecommunication equipment protection	STMicroelectronics

Other Datasheets by SY Semiconductors

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Features ◆6A,400V, RDS(on) =1.0 Ω@VGS=10V ◆Low gate charge ( typical 13 nC) ◆Low Crss ( typical 7pF) ◆100% avalanche tested ◆Fast switching ◆Improved dv/dt capability Application ◆Electronic Ballast ◆Active power factor correction ◆ Switching mode power supply SMP730 400V N-Channel Power MOSFET Absolute Maximum Ratings(Tc=25°C unless otherwise noted) Symbol VDSS VGS ID IDM PD Tj TSTG EAS IAR Drain-source Voltage Gate-source Voltage Parameters Continuous Drain Current Drain Current-Pulsed ① Power Dissipation Junction Temperature Storage Temperature Single Pulse Avalanche Energy② Avalanche Current① --TC=25°C --TC=100°C --(TC = 25°C) -- Derate above 25°C Value 400 ±30 6 3.6 24 75 0.6 150 -55-150 280 7.