* P-Channel -30V/-2.8A,RDS(ON)=105mΩ@VGS=-10V -30V/-2.5A,RDS(ON)=135mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-.

such as notebook computer power management and other battery powered circuits where high-side switching , low in-line po.

The SPP6506 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior swi.

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