SPP3413W Datasheet - SYNC POWER

SPP3413W P-Channel MOSFET

The SPP3413W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such .

SPP3413W Features

* -20V/-3.4A,RDS(ON)=95mΩ@VGS=-4.5V

* -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V

* -20V/-1.7A,RDS(ON)=145mΩ@VGS=-1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23 package design APPLICATIONS

SPP3413W Datasheet (340.10 KB)