* P-Channel -30V/0.45A,RDS(ON)=0.65Ω@VGS=-4.5V -30V/0.35A,RDS(ON)=0.90Ω@VGS=-2.5V -30V/0.25A,RDS(ON)=1.50Ω@VGS=-1.8V
* Super high density cell design for extremel.

such as notebook computer power management and other battery powered circuits where high-side switching , low in-line po.

The SPP1307 is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching.

SPP1305

SPP100N03S2-03

SPP100N03S2L-03

SPP100N04S2-04

SPP100N04S2L-03

SPP100N06S2-05

SPP100N06S2L-05

SPP100N08S2-07

SPP100N08S2L-07

SPP1013

SPP1015

SPP1021

SPP1023

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