SPN8919 mosfet equivalent, n-channel mosfet.
* 100V/2A, RDS(ON)=180mΩ@VGS=10V
* High density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current
capability
* SOT.
* High Frequency Small Power Switching for
MB/NB/VGA
* Network DC/DC Power System
* Load Switch
FEATURES
The SPN8919 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN8910 has been designed specifically to improve the overall efficiency of DC/DC converters using.
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