SPN8812 - N-Channel MOSFET

SYNC POWER

Description

The SPN8812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

100V/63A,RDS(ON)=9.8mΩ@VGS=10V.
100V/63A,RDS(ON)=13.0mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
PPAK5x6-8L package design PIN.

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SPN8812 n-channel mosfet by SYNC POWER - Datasheet Preview

Datasheet Details

Part number	SPN8812
Manufacturer	SYNC POWER
File Size	276.78 KB
Description	N-Channel MOSFET
Datasheet	SPN8812 Datasheet

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Other Datasheets by SYNC POWER

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Full PDF Text Transcription (Reference)

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SPN8812 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN8812 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Motor Control  Power Tool FEATURES  100V/63A,RDS(ON)=9.8mΩ@VGS=10V  100V/63A,RDS(ON)=13.0mΩ@VGS=4.