SPN8206 mosfet equivalent, common-drain dual n-channel mosfet.
* 20V/5.0A,RDS(ON)=8.2mΩ@VGS=4.5V
* 20V/3.0A,RDS(ON)=11.0mΩ@VGS=2.5V
* Super high density cell design for extremely low
RDS(ON)
* Exceptional on-resistanc.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.
The SPN8206 is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These.
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