SPN80T06 Datasheet - SYNC POWER

SPN80T06 N-Channel MOSFET

The SPN80T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifi.

SPN80T06 Features

* 60V/80A, RDS(ON)=9mΩ@VGS=10V 60V/80A, RDS(ON)=13mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220-3L/PPAK5x6-8L/TO-252-2L package design PIN CONFIGURATION TO-220-3L PPAK5x6-8L TO-252 PAR

SPN80T06 Datasheet (438.70 KB)