SPN7002K mosfet equivalent, n-channel mosfet.
60V/0.50A , RDS(ON)= 2.0Ω@VGS=10V 60V/0.20A , RDS(ON)= 4.0Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC cu.
requiring up to 640mA DC and can deliver pulsed currents up to 950mA. These products are particularly suited for low vol.
The SPN7002K is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching perform.
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