SPN6336 Datasheet, SYNC POWER

* N-Channel 20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V
* Super high density cell design for extremely low .

such as notebook computer power management and other battery powered circuits where high-side switching , low in-line po.

The SPN6336 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior swi.