* 60V/8.0A,RDS(ON)=38mΩ@VGS=10V
* 60V/6.0A,RDS(ON)=44mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance a.

* DC/DC Converter
* Load Switch FEATURES
* 60V/8.0A,RDS(ON)=38mΩ@VGS=10V
* 60V/6.0A,RDS(ON)=44mΩ@VGS=4..

The SPN4436 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.

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