SPN4402B mosfet equivalent, n-channel mosfet.
* 30V/12A,RDS(ON)=15mΩ@VGS=10V
* 30V/10A,RDS(ON)=18mΩ@VGS=4.5V
* Super high density cell design for extremely low
RDS (ON)
* Exceptional on-resistance and.
* Power Management in Note book
* Battery Powered System
* DC/DC Converter
* Load Switch
* LCD Displ.
The SPN4402B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are par.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 472.60KB)