SPN3402W mosfet equivalent, n-channel mosfet.
* 30V/2.8A,RDS(ON)=58mΩ@VGS=10V
* 30V/2.3A,RDS(ON)=65mΩ@VGS=4.5V
* 30V/1.5A,RDS(ON)=105mΩ@VGS=2.5V
* Super high density cell design for extremely low
RDS(.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.
The SPN3402W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are par.
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