SPN2326 mosfet equivalent, n-channel mosfet.
* 100V/3A,RDS(ON)=310mΩ@VGS=10V
* High density cell design for extremely low
RDS (ON)
* Exceptional on-resistance and maximum DC
current capability
* SOT-.
* Powered System
* DC/DC Converter
* Load Switch
FEATURES
* 100V/3A,RDS(ON)=310mΩ@VGS=10V
* High de.
The SPN2326 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN2326 has been designed specifically to improve the overall efficiency of DC/DC converters using.
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