SPN2326 - N-Channel MOSFET

SYNC POWER

Description

The SPN2326 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

Features

100V/3A,RDS(ON)=310mΩ@VGS=10V.
High density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
SOT-23-6L package design PIN.

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SPN2326 n-channel mosfet by SYNC POWER - Datasheet Preview

Datasheet Details

Part number	SPN2326
Manufacturer	SYNC POWER
File Size	327.53 KB
Description	N-Channel MOSFET
Datasheet	SPN2326 Datasheet

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Full PDF Text Transcription (Reference)

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SPN2326 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2326 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN2326 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Powered System  DC/DC Converter  Load Switch FEATURES  100V/3A,RDS(ON)=310mΩ@VGS=10V  High density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23-6L package design PIN CONFIGURATION(SOT-23-6L) 2020/02/21 Ver.