SPN10T10 mosfet equivalent, n-channel mosfet.
* 100V/5A,RDS(ON)=160mΩ@VGS=10V
* High density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current
capability
* TO-22.
* Powered System
* DC/DC Converter
* Load Switch
FEATURES
* 100V/5A,RDS(ON)=160mΩ@VGS=10V
* High de.
The SPN10T10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN10T10 has been designed specifically to improve the overall efficiency of DC/DC converters usi.
Image gallery
TAGS
Download (Size : 391.21KB)