Download the SSF65R190S2 datasheet PDF.
This datasheet also covers the SSF65R190S2-SUPER variant, as both devices belong to the same 650v n-channel super-junction mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
Key Features
Multi-Epi process SJ-FET.
700V @TJ = 150 ℃.
Typ. RDS(on) = 0.16Ω.
Ultra Low Gate Charge (typ. Qg = 36.5nC).
100% avalanche tested
SSF65R190S2
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID IDM VGSS
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source voltage
EAS IAS dv/dt
Single Pulsed Avalanche Energy (Note 2)
Avalanche current, repetitive or not-repetitive (pul.
Full PDF Text Transcription for SSF65R190S2 (Reference)
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SSF65R190S2. For precise diagrams, and layout, please refer to the original PDF.
SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS*65R190S2 Rev. 1.7 Aug. 2022 www.superse...
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Junction Power MOSFET Gen-Ⅱ SS*65R190S2 Rev. 1.7 Aug. 2022 www.supersemi.com.cn SSF65R190S2 650V N-Channel Super-Junction MOSFET Gen-Ⅱ SSF65R190S2 650V N-Channel Super-Junction MOSFET Gen-Ⅱ Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode ope
SSF65R190S2 Datasheet
