SLM5868-25F Datasheet | SUMITOMO

FEATURES - High Output Power: P1d B=44.0d Bm(Typ.) - High Gain: G1d B=9.0d B(Typ.) - High PAE: hadd=34%(Typ.) - Broad Band: 5.85 to 6.75GHz - Impedance Matched Zin/Zout = 50ohm - Hermetically Sealed Package DESCRIPTION The SLM5868-25F is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a 50ohm system. SEDI’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS Item Drain-Source Voltage (Tc=25deg.C) Gate-Source Voltage (Tc=25deg.C) Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 93.7 -65 to +175 +175 Unit V V W deg.C deg.C REMENDED OPERATING CONDITION Item DC Input Voltage Forw ard Gate Current Reverse Gate Current Storage Tem perature Channel Tem perature Sym bol V DS IGF IGR Tstg Tch Condition RG=25 ohm RG=25 ohm -65 to +150 +155 Re m end 10 +64.0 -11.2 Unit V m A m A deg.C deg.C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Drain Current Trans conductance Pinch-off Voltage Gate-Source Breakdow n Voltage Output Pow er at 1d B G.C.P. Pow er Gain at 1d B G.C.P. Drain Current Pow er-added Efficiency Gain Flatness 3rd Order Interm odulation Distortion Therm al Resistance Channel Tem perature Rise CASE STYLE : IK Sym bol IDSS gm Vp V GSO P1d B G1d B Idsr h add DG IM3 Rth DTch Condition V DS=5V , V GS=0V V DS=5V , IDS=6.5A V DS=5V , IDS=500m A IGS=-500u A V DS=10V f= 5.85 to 6.75 GHz IDSDC=0.65IDSS (typ.) Zs=Z L=50 ohm f=6.75 GHz Df=10MHz ，2-tone Test Pout=33.0d Bm (S.C.L.) Channel to Case (10V x Idsr - Pout + Pin) x Rth S.C.L. : Single Carrier Level Min. -0.5 -5.0 43.0 8.0 -42 Lim it Typ. 10 10 -1.5 44.0 9.0 6.5 34 -45 1.4 Max. 15.0 -3.0 7.6 1.6 1.6 100 Unit A S V V d Bm d B A % d B d Bc deg.C/W deg.C G.C.P.: Gain pression Point ESD Class 3A 4000V to 8000V Note : Based on EIAJ ED-4701 C-111A (C=100p F, R=1.5kohm) Ro HS PLIANCE Yes Edition 1.0 Oct....