FLU10ZME1 Datasheet | SUMITOMO

FEATURES - High Output Power: P1d B=29.5d Bm(typ.) - High Gain: G1d B=13.0d B(typ.) - Low Cost Plastic(SMT) Package - Tape and Reel Available DESCRIPTION The FLU10ZME1 is a Ga As FET designed for base station and CPE application up to a 3.0GHz frequency range. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications. SEDI’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Symbol Rating Drain-Source Voltage Gate-Soutce Voltage -5 Total Power Dissipation Storage Temperature Tstg -55 to +150 Channel Temperature Unit V V W deg.C deg.C REMENDED OPERATING CONDITION(Case Temperature Tc=25deg.C) Item DC Input Voltage Channel Temperature Forward Gate Current Reverse Gate Current Gate Resistance Symbol VDS Tch IGF IGR Rg Condition ＜10 ＜145 ＜4.8 ＞-0.5 400 Unit V deg.C m A m A ohm ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Drain Current Trans Conductance Pinch-off Voltage Symbol IDSS gm Vp Test Conditions VDS=5V,VGS=0V VDS=5V,IDS=200m A VDS=5V,IDS=15m A Min. - -1.0 Limit Typ. 300 -2.0 Gate-Source Breakdown Voltage VGSO IGS=-15µA...