High Output Power: P1dB=43.0dBm(Typ.) High Gain: G1dB=7.0dB(Typ.) High PAE: ηadd=27%(Typ.) Broad Band: 10.7～11.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed P.

The FLM1011-20F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C) Item Drain-Source Voltage Gate-Source Voltage Tota.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts