FLM0910-12F - X-Band Internally Matched FET

SUMITOMO

General Description

The FLM0910-12F is a power GaAs FET that is internally matched for standard communication and radar bands to provide optimum power and gain in a 50Ω system.

Key Features

High Output Power: P1dB=40.5dBm(Typ. ) High Gain: G1dB=7.0dB(Typ. ) High PAE: ηadd=25%(Typ. ) Broad Band: 9.5~10.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package.

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FLM0910-12F x-band internally matched fet by SUMITOMO - Datasheet Preview

Datasheet Details

Part number	FLM0910-12F
Manufacturer	SUMITOMO
File Size	179.15 KB
Description	X-Band Internally Matched FET
Datasheet	FLM0910-12F Datasheet

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FLM0910-15F	X-Band Internally Matched FET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FLM0910-12F X-Band Internally Matched FET FEATURES High Output Power: P1dB=40.5dBm(Typ.) High Gain: G1dB=7.0dB(Typ.) High PAE: ηadd=25%(Typ.) Broad Band: 9.5~10.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FLM0910-12F is a power GaAs FET that is internally matched for standard communication and radar bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PTot Tstg Tch Rating 15 -5 57.