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WS57C71C - HIGH SPEED 32K x 8 CMOS PROM/RPROM

General Description

The WS57C71C is a High Performance 256K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM).

It is manufactured in an advanced CMOS technology and utilizes WSI's patented self-aligned split gate EPROM cell.

Key Features

  • Immune to Latch-UP.
  • Up to 200 mA.
  • Low Power Consumption.
  • Fast Programming.
  • ESD Protection Exceeds 2000V.
  • Available in 300 Mil DIP and PLDCC.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WS57C71C HIGH SPEED 32K x 8 CMOS PROM/RPROM • Ultra-Fast Access Time — 35 ns KEY FEATURES • Immune to Latch-UP — Up to 200 mA • Low Power Consumption • Fast Programming • ESD Protection Exceeds 2000V • Available in 300 Mil DIP and PLDCC GENERAL DESCRIPTION The WS57C71C is a High Performance 256K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology and utilizes WSI's patented self-aligned split gate EPROM cell. The industry standard PROM pin configuration of the WS57C71C provides an easy upgrade path from a 16K x 8 device.