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W34NB20 - N-Channel MOSFET

General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

Key Features

  • Type VDSS RDS(on) STW34NB20 200 V < 0.075 Ω ID 34 A Figure 1. Package.

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Full PDF Text Transcription (Reference)

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STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH™ MOSFET Table 1. General Features Type VDSS RDS(on) STW34NB20 200 V < 0.075 Ω ID 34 A Figure 1. Package FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.062 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ VERY LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.