Datasheet4U Logo Datasheet4U.com

W26NM50 - N-Channel MOSFET

General Description

MDmesh™ technology applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

The resulting product offers low onresistance, high dv/dt capability and excellent avalanche characteristics.

Figure 1.

Key Features

  • Type STW26NM50 VDSS 500 V RDS(on) max < 0.12 Ω ID 30 A.
  • High dv/dt and avalanche capabilities.
  • Improved ESD capability.
  • Low input capacitance and gate charge.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
W26020A 128K x 16 High Speed CMOS Static RAM Winbond
W2624NC160 Rectifier Diode IXYS
W2624NC180 Rectifier Diode IXYS
W2624NC200 Rectifier Diode IXYS
W2624NC220 Rectifier Diode IXYS

Other Datasheets by STMicroelectronics

Part Number Description
W26NM60 STW26NM60

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STW26NM50 N-channel 500 V, 0.10 Ω, 30 A TO-247 MDmesh™ Power MOSFET Features Type STW26NM50 VDSS 500 V RDS(on) max < 0.12 Ω ID 30 A ■ High dv/dt and avalanche capabilities ■ Improved ESD capability ■ Low input capacitance and gate charge Application ■ Switching applications Description MDmesh™ technology applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers low onresistance, high dv/dt capability and excellent avalanche characteristics. 3 2 1 TO-247 Figure 1. Internal schematic diagram $ ' Table 1. Device summary Order codes STW26NM50 Marking W26NM50 3 !-V Package TO-247 Packaging Tube October 2009 Doc ID 8291 Rev 11 1/12 www.st.