Datasheet Summary
STW26NM50
N-channel 500 V, 0.10 Ω, 30 A TO-247 MDmesh™ Power MOSFET
Features
Type STW26NM50
VDSS 500 V
RDS(on) max
< 0.12 Ω
ID 30 A
- High dv/dt and avalanche capabilities
- Improved ESD capability
- Low input capacitance and gate charge
Application
- Switching applications
Description
MDmesh™ technology applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers low onresistance, high dv/dt capability and excellent avalanche characteristics.
3 2 1
TO-247
Figure 1. Internal schematic diagram
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Table 1. Device summary Order codes STW26NM50
Marking W26NM50
3
!-V
Package...