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STW20NM50
N-CHANNEL 550V @ Tjmax - 0.20Ω - 20A TO-247 MDmesh™ MOSFET
TYPE
VDSS
RDS(on)
ID
(@Tjmax)
STW20NM50
550V
< 0.25Ω
20 A
TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
t(s) 100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
uc CHARGE d LOW GATE INPUT RESISTANCE ro TIGHT PROCESS CONTROL AND HIGH P MANUFACTURING YIELDS te DESCRIPTION le The MDmesh™ is a new revolutionary MOSFET o technology that associates the Multiple Drain pros cess with the Company’s PowerMESH™ horizontal b layout. The resulting product has an outstanding low O on-resistance, impressively high dv/dt and excellent - avalanche characteristics.