VNP35NV04-E Datasheet | STMicroelectronics

VNB35NV04-E, VNP35NV04-E, VNV35NV04-E OMNIFET II: fully autoprotected Power MOSFET 3 1 D2PAK Power SO-10 3 2 1 TO-220 Features Type RDS(on) VNB35NV04-E VNP35NV04-E VNV35NV04-E 10 mΩ(1) 1. For Power SO-10 only Ilim 30 A Vclamp 40 V - Linear current limitation - Thermal shutdown - Short circuit protection - Integrated clamp - Low current drawn from input pin - production data - Diagnostic feedback through input pin - ESD protection - Direct access to the gate of the Power MOSFET (analog driving) - patible with standard Power MOSFET Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 k Hz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input...