VND5N07-E mosfet equivalent, fully autoprotected power mosfet.
Max. on-state resistance (per ch.) Current limitation (typ) Drain-Source clamp voltage
RDS (on) ILIMH
VCLAMP
0.2Ω 5A 70V
Description
The VND5N07-E is a monolithic dev.
Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Faul.
The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cl.
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