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VND5N07-E Datasheet, STMicroelectronics

VND5N07-E mosfet equivalent, fully autoprotected power mosfet.

VND5N07-E Avg. rating / M : 1.0 rating-11

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VND5N07-E Datasheet

Features and benefits

Max. on-state resistance (per ch.) Current limitation (typ) Drain-Source clamp voltage RDS (on) ILIMH VCLAMP 0.2Ω 5A 70V Description The VND5N07-E is a monolithic dev.

Application

Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Faul.

Description

The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cl.

Image gallery

VND5N07-E Page 1 VND5N07-E Page 2 VND5N07-E Page 3

TAGS

VND5N07-E
fully
autoprotected
Power
MOSFET
STMicroelectronics

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