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VND5E012MY-E Datasheet

Manufacturer: STMicroelectronics
VND5E012MY-E datasheet preview

Datasheet Details

Part number VND5E012MY-E
Datasheet VND5E012MY-E_STMicroelectronics.pdf
File Size 770.78 KB
Manufacturer STMicroelectronics
Description Double channel high-side driver
VND5E012MY-E page 2 VND5E012MY-E page 3

VND5E012MY-E Overview

The VND5E012MY-E is a double channel highside driver manufactured in the ST proprietary VIPowerâ„¢ M0-5 technology and housed in the tiny PowerSSO-36 package. The VND5E012MY-E is designed to drive 12V automotive grounded loads delivering protection, diagnostics and easy 3V and 5V CMOS patible interface with any microcontroller. The device integrates advanced protective functions such as load current limitation, inrush...

VND5E012MY-E Key Features

  • Reverse battery protection with self switch on of the Power MOSFET (see Figure 29)
  • Electrostatic discharge protection
  • General
  • Inrush current active management by power limitation
  • Very low standby current
  • 3.0V CMOS patible inputs
  • Optimized electromagnetic emissions
  • Very low electromagnetic susceptibility
  • In pliance with the 2002/95/EC european directive
  • Very low current sense leakage

VND5E012MY-E Applications

  • Reverse battery protection with self switch on of the Power MOSFET (see Figure 29)
  • Electrostatic discharge protection
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VND5E012MY-E Distributor

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