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VND5E004ASP30-E - Double 4m ohm high-side driver

Download the VND5E004ASP30-E datasheet PDF (VND5E004A-E included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for double 4m ohm high-side driver.

Description

The VND5E004A-E and VND5E004ASP30-E are double channel high-side drivers manufactured using ST proprietary VIPower™ M0-5 technology and housed in PQFN-12x12 power lead-less and MultiPowerSO-30 packages.

Features

  • Max transient supply voltage Operating voltage range Max on-state resistance (per ch. ) Current limitation (typ) Off-state supply current 1. Typical value with all loads connected VCC VCC RON ILIMH IS 41 V 4.5 to 28 V 4 mΩ 90 A 2 µA(1) PQFN - 12x12 Power lead-less MultiPowerSO-30.
  • Reverse battery protection with self switch on of the Power MOSFET.
  • Electrostatic discharge protection.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VND5E004A-E_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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www.DataSheet4U.com VND5E004A-E VND5E004ASP30-E Double 4mΩ high-side driver with analog current sense for automotive applications Features Max transient supply voltage Operating voltage range Max on-state resistance (per ch.) Current limitation (typ) Off-state supply current 1. Typical value with all loads connected VCC VCC RON ILIMH IS 41 V 4.5 to 28 V 4 mΩ 90 A 2 µA(1) PQFN - 12x12 Power lead-less MultiPowerSO-30 – Reverse battery protection with self switch on of the Power MOSFET – Electrostatic discharge protection Applications ■ General – Very low standby current – 3.
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