Part TXDV408
Description ALTERNISTORS
Manufacturer STMicroelectronics
Size 303.51 KB
STMicroelectronics

TXDV408 Overview

Description

The TXDV 408 ---> 808 use a high performance passivated glass alternistor technology. Symbol IGT VGT VGD tgt IL VD=12V VD=12V Test Conditions (DC) RL=33Ω (DC) RL=33Ω Tj=25°C Tj=25°C Tj=110°C Tj=25°C Tj=25°C Quadrant I-II-III I-II-III I-II-III I-II-III I-III II IH * VTM * IDRM IRRM dV/dt * IT= 500mA gate open ITM= 11A tp= 380µs VDRM Rated VRRM Rated Linear slope up to VD=67%VDRM gate open (dV/dt)c = 200V/µs (dV/dt)c = 10V/µs * For either polarity of electrode A2 voltage with reference to.

Key Features

  • VERY HIGH COMMUTATION : > 28 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) dV/dt : 500 V/µs min