TXDV408
FEATURES
VERY HIGH MUTATION : > 28 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) d V/dt : 500 V/µs min
DESCRIPTION
The TXDV 408 ---> 808 use a high performance passivated glass alternistor technology. Featuring very high mutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) ABSOLUTE RATINGS (limiting values)
Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) Parameter
A1 A2
TO220AB (Plastic)
Value Tc = 90 °C 8
Unit A
ITSM tp = 2.5 ms tp = 8.3 ms tp = 10 ms
115 85 80 32 20 100
- 40 to + 150
- 40 to + 125 260
I2t d I/dt
I2t value Critical rate of rise of on-state current Gate supply : IG = 500m A di G/dt = 1A/µs tp = 10 ms Repetitive F = 50 Hz Non Repetitive
A2s A/µs
Tstg Tj Tl
Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from...
