TS12 Overview
Key Specifications
Mount Type: Through Hole
Description
Available in though-hole or surface-mount packages, they provide an optimized performance in a limited space area. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT (AV) Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) DPAK (TS12-B) (TN12-B) A D 2PAK (TN12-G) A K A G K A IPAK (TS12-H) (TN12-H) G TO-220AB (TYN) Value Tc = 105°C Tc = 105°C DPAK / IPAK 12 8 D PAK / TO-220AB 146 140 98 50 4 1 - 40 to + 150 - 40 to + 125 5 Unit A A ITSM It dI/dt IGM PG(AV) Tstg Tj VRGM Non repetitive surge peak on-state current I t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range tp = 8.3 ms tp = 10 ms tp = 10 ms F = 60 Hz tp = 20 µ s Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C 115 110 60 A AS A/µs A W °C V Maximum peak reverse gate voltage (for TN12 & TYN) September 2000 - Ed: 3 1/10 TN12, TS12 and TYNx12 Series s SENSITIVE Symbol IGT VGT VGD VRG IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM IRG = 10 µA IT = 50 mA IG = 1 mA RGK = 1 kΩ R GK = 1 kΩ RGK = 220 Ω Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C tp = 380 µs RL = 3.3 kΩ R GK = 1 kΩ Tj = 125°C VD = 12 V RL = 140 Ω Test Condition.
Key Features
- Symbol IT(RMS) V DRM/VRRM IGT Value 12 600 to 1000 0.2 to 15 Unit A A G A K V mA K A G K A G A
