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TM8050H-8D3 - 80A high temperature Thyristor

Description

Available in high power package (D3PAK), the device is suitable in applications where power switching (IT(RMS) = 80 A at TC = 130 °C) and power dissipation (VTM = 1.55 V at 160 A) are critical, such as motorbike voltage regulator, bypass AC switch, cont

Features

  • High junction temperature: Tj = 150 °C.
  • Blocking voltage: VDRM = VRRM = 800 V.
  • Nominal current: IT(RMS) = 80 A.
  • Gate triggering current: IGT max. = 50 mA.
  • High noise immunity: dV/dt > 1 kV/µs.
  • Surface mounted device D3PAK.
  • Increase of thermal margin due to extended Tj up to 150 °C.
  • Low ID and IR in blocking state.
  • High compact power SMD design.

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Datasheet preview – TM8050H-8D3

Datasheet Details

Part number TM8050H-8D3
Manufacturer STMicroelectronics
File Size 257.96 KB
Description 80A high temperature Thyristor
Datasheet download datasheet TM8050H-8D3 Datasheet
Additional preview pages of the TM8050H-8D3 datasheet.

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Full PDF Text Transcription

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TM8050H-8D3 80 A high temperature Thyristor (SCR) Datasheet - production data A G K A K G D3PAK Features  High junction temperature: Tj = 150 °C  Blocking voltage: VDRM = VRRM = 800 V  Nominal current: IT(RMS) = 80 A  Gate triggering current: IGT max.
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