TM8050H-8D3 Key Features
- High junction temperature: Tj = 150 °C
- Blocking voltage: VDRM = VRRM = 800 V
- Nominal current: IT(RMS) = 80 A
- Gate triggering current: IGT max. = 50 mA
- High noise immunity: dV/dt > 1 kV/µs
- Surface mounted device D3PAK
- Increase of thermal margin due to extended
- Low ID and IR in blocking state
- High pact power SMD design