STY80NM60N mosfet equivalent, n-channel power mosfet.
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Type
VDSS 600 V
RDS(on) < 0.040 Ω
ID 80 A
Pw 560 W
STY80NM60N
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100% avalanche tested Low input capacitance and gate charge Low.
Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET ass.
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefor.
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