STWA57N65M5
Description
* 6 $0Y These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is bined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.
Key Features
- Worldwide best RDS(on)*area amongst the silicon based devices
- Higher VDSS rating, high dv/dt capability
- Excellent switching performance
- Easy to drive, 100% avalanche tested Figure
