STWA32N65DM6AG datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code STWA32N65DM6AG VDS 650 V RDS(on) max. 97 mΩ ID 37 A
* AEC-Q101 qualified
* Fast-recovery body diode
* Lower RDS(on) per area vs previous genera.

Application

* Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery.

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per.

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