Datasheet Summary
N-CHANNEL 800V
- 1.3 Ω
- 6.7A TO-247 Zener-Protected PowerMESH™III MOSFET
TYPE STW8NC80Z
.. n TYPICAL n n n n
VDSS 800 V
RDS(on) < 1.5 Ω
ID 6.7 A
RDS(on) = 1.3 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
TO-247
DESCRIPTION The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS n...