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STP75N15
STW75N15 - STB75N15
N-CHANNEL 150V - 0.02Ω - 75A TO-220/D²PAK/TO-247 LOW GATE CHARGE STripFET™ MOSFET
TARGET SPECIFICATION
Table 1: General Features
TYPE STP75N15 STB75N15T4 STW75N15
s s s s
Figure 1: Package
ID 75 A 75 A 75 A Pw 300 W 300 W 350 W
3 1 2
2 1 3
VDSS 150 V 150 V 150 V
RDS(on) < 0.023 Ω < 0.023 Ω < 0.023 Ω
s s
TYPICAL RDS(on) = 20 mΩ GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY EXCELLENT FIGURE OF MERIT (RDS*Qg) 100% AVALANCHE TESTED
TO-220
TO-247
3 1
DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.
STW75N15 Datasheet
