Order codes VDS @ TJmax RDS(on) max ID STW70N60M2 650 V 0.040 Ω 68 A 3 2 1 TO-247 Figure 1. Internal schematic diagram D(2) G(1)
* Extremely low gate charge

* Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology..

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for th.

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