STW58N60DM2AG datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code STW58N60DM2AG VDS 600 V RDS(on) max. 0.060 Ω ID 50 A PTOT 360 W 3 2 1 TO-247 Figure 1: Internal schematic diagram D(2) G(1) S(3) AM15572v1_no_tab
*.

Application

and AEC-Q101 qualified
* Fast-recovery body diode
* Extremely low gate charge and input capacitance
* Low on.

Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters.

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