STW56N60M2-4 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code VDS at TJ max. RDS(on) max. ID STW56N60M2-4 650 V 55 mΩ 52 A
* Extremely low gate charge
* Excellent output capacitance (Coss) profile
* 1.

Application

* Switching applications Power source (2) AM10177v2Z Description This device is an N-channel Power MOSFET develope.

Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the.

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