STW52N60DM6 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code VDS RDS(on) max. ID STW52N60DM6 600 V 74 mΩ 45 A
* Fast-recovery body diode
* Lower RDS(on) per area vs previous generation
* Low gate cha.

Application

* Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecover.

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per.

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