STW47NM60ND mosfet equivalent, n-channel mosfet.
3 2 1
TO-247
Figure 1. Internal schematic diagram
Order code VDS @ TJMAX RDS(on) max ID
STW47NM60ND 650 V
0.088 Ω 35 A
* Designed for automotive applications and.
and AEC-Q101 qualified
* The worldwide best RDS(on)*area amongst the fast recovery diode devices
* 100% avalanch.
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.
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