STW43NM50N mosfets equivalent, power mosfets.
Type STW43NM50N
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VDSS @ Tjmax 550 V
RDS(on) <0.085 Ω
ID 37 A
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
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Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET ass.
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefor.
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