STW3N170 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

3 2 1 TO-247 D(2, TAB) Order code VDS RDS(on) max. STW3N170 1700 V 13 Ω
* 100% avalanche tested
* Intrinsic capacitances and Qg minimized
* High speed.

Application

* Switching applications ID 2.6 A Description G(1) S(3) This Power MOSFET is designed using the STMicroelectron.

Description

G(1) S(3) This Power MOSFET is designed using the STMicroelectronics consolidated striplayout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. AM0.

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