STW35N65DM2 datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order code VDS RDS(on) max. ID STW35N65DM2 650 V 110 mΩ 32 A 3 2 1 TO-247 D(2, TAB)
* Fast-recovery body diode
* Extremely low gate charge and input cap.

Application

* Switching applications G(1) Description S(3) NG1D2TS3Z This high-voltage N-channel Power MOSFET is part of t.

Description

S(3) NG1D2TS3Z This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-effic.

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