Order code VDS @ TJmax RDS(on) max. STW25N60M2-EP 650 V 0.188 Ω
* Extremely low gate charge
* Excellent output capacitance (COSS) profile
* Very low tu.

* Switching applications
* Tailored for Very high frequency converters (f > 150 kHz) Description This device is.

This device is an N-channel Power MOSFET developed using MDmesh™ S(3) M2 enhanced performance (EP) technology. Thanks to its strip layout and an AM01476v1 improved vertical structure, the device exhibits low on-resistance, optimized switching charact.

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