Order codes VDS @ TJmax RDS(on) max ID STP13N60M2 STU13N60M2 650 V 0.38 Ω 11 A STW13N60M2
* Extremely low gate charge
* Lower RDS(on) x area vs previous ge.

* Switching applications Description AM15572v1 These devices are N-channel Power MOSFETs developed using a new ge.

AM15572v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the w.

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