www.DataSheet4U.com Type VDSS (@Tjmax) 650V 650V 650V 650V 650V RDS(on) < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω < 0.41Ω ID 1 3 3 12 STB12NM60N STB12NM60N-1 STF12NM60N STP1.

This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefor.

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