Order code VDS RDS(on) max. ID STW12N170K5 1700 V 2.9 Ω 5A
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (figure of merit)
* Ultra-low gat.

* Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 tech.

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring super.

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